73113 tkim tc-00003017/o2412 tkim/42503 tsim ta-100055, 100056/ no.6324-1/6 10700 ts (koto) ta-2543 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 2sa608n/2sc536n bipolar transistor (?) 50v, (?) 150ma, low v ce ( sat ) ( pnp ) npn single npa-wa applicaitons ? capable of being used in the low frequency to high frequency range features ? large current capacity and wide aso speci cations ( ) : 2sa608n absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector to base voltage v cbo (--50)60 v collector to emitter voltage v ceo (--)50 v emitter to base voltage v ebo (--)6 v collector current i c (--)150 ma collector current (pulse) i cp (--)400 ma collector dissipation p c 500 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7542-001 ordering number : en6324b ordering & package information device package shipping memo 2sa608nf-npa-at npa sc-43a, to-92, to-226aa, sot-54 1,500 pcs./box pb-free 2sa608ng-npa-at npa sc-43a, to-92, to-226aa, sot-54 1,500 pcs./box 2sc536nf-npa-at npa sc-43a, to-92, to-226aa, sot-54 1,500 pcs./box 2SC536NG-NPA-AT npa sc-43a, to-92, to-226aa, sot-54 1,500 pcs./box marking 1 : emitter 2 : collecto r 3 : base npa-wa 4.0max 1.4max 0.45 0.5 0.6 4.5 14.0 13.7 1.27 2.5 2.5 0.45 0.44 123 4.5 3.7 3.5 2sa608nf-npa-at 2sa608ng-npa-at 2sc536nf-npa-at 2SC536NG-NPA-AT a608 lot no. r a n k c536 lot no. r a n k stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
2sa608n/2sc536n no.6324-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)40v, i e =0a (--)0.1 a emitter cutoff current i ebo v eb =(--)5v, i c =0a (--)0.1 a dc current gain h fe 1v ce =(--)6v, i c =(--)1ma 160* 560* h fe 2v ce =(--)6v, i c =(--)0.1ma 70 gain-bandwidth product f t v ce =(--)6v, i c =(--)10ma 200 mhz output capacitance cob v cb =(--)6v, f=1mhz (4.5)3.0 pf collector to emitter saturation voltage v ce (sat) i c =(--)100ma, i b =(--)10ma (--)0.3 v base to emitter saturation voltage v be (sat) i c =(--)100ma, i b =(--)10ma (--)1.0 v collector to base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)60 v collector to emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter to base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v * : the 2sa608n / 2sc536n are classi ed by 1ma h fe as follow : rank f g h fe 160 to 320 280 to 560 --16 --12 -- 8 -- 4 0 0 --10 --20 --30 --40 --50 i c -- v ce --50 a --45 a --40 a --35 a --30 a --25 a --20 a --15 a --10 a -- 5 a 50 a 45 a 40 a 35 a 30 a 25 a 20 a 15 a 10 a 5 a i b =0 a 2sa608n it00496 20 16 12 8 4 0 010203040 50 i c -- v ce i b =0 a 2sc536n it00497 --240 --200 --160 --120 --80 --40 0 0 --0.2 --0.4 --0.6 --0.8 --1.2 --1.0 i c -- v be it00498 2sa608n v ce = --6v 240 200 160 120 80 40 0 0 0.2 0.4 0.6 0.8 1.2 1.0 i c -- v be it00499 ta=75 c 25 c --25 c ta=75 c 25 c --25 c 2sc536n v ce =6v collector to emitter voltage, v ce -- v collector current, i c -- ma collector to emitter voltage, v ce -- v collector current, i c -- ma base to emitter voltage, v be -- v collector current, i c -- ma base to emitter voltage, v be -- v collector current, i c -- ma
2sa608n/2sc536n no.6324-3/6 --1.0 --0.1 2 3 5 7 2 3 5 7 --0.01 --1.0 --10 23 57 23 57 23 57 --100 --1000 v ce (sat) -- i c it00506 2sa608n i c / i b = --10 1.0 0.1 2 3 5 7 2 3 5 7 0.01 1.0 10 23 57 23 57 23 57 100 1000 v ce (sat) -- i c it00507 2sc536n i c / i b =10 cob -- v cb 0.1 10 1.0 7 5 3 2 7 5 3 2 7 5 3 2 100 --0.1 2 3 57 2 3 57 2 3 57 --10 --1.0 --100 it00504 2sa608n f=1mhz cob -- v cb 0.1 10 1.0 7 5 3 2 7 5 3 2 7 5 3 2 100 0.1 23 57 23 57 23 57 10 1.0 100 it00505 2sc536n f=1mhz f t -- i c 7 3 100 2 5 7 3 2 5 10 1000 --1.0 257 3 --10 257 3 --100 257 3 --1000 it00502 2sa608n v ce = --6v f t -- i c 7 3 100 2 5 7 3 2 5 10 1000 1.0 257 3 10 257 3 100 257 3 1000 it00503 2sc536n v ce =6v 2sa608n v ce = --6v 1000 100 7 5 3 2 7 5 3 2 10 --0.1 3 25 --1000 --1.0 73 257 3 257 3 257 --10 --100 h fe -- i c it00500 ta=75 c 25 c --25 c 1000 100 7 5 3 2 7 5 3 2 10 0.1 3 25 1000 1.0 73 257 3 257 3 257 10 100 h fe -- i c it00501 ta=75 c 25 c --25 c 2sc536n v ce =6v collector current, i c -- ma dc current gain, h fe collector current, i c -- ma dc current gain, h fe gain-bandwidth product, f t -- mhz collector current, i c -- ma gain-bandwidth product, f t -- mhz collector current, i c -- ma collector to base voltage, v cb -- v output capacitance, cob -- pf collector to base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- ma collector to emitter saturation voltage, v ce (sat) -- v collector current, i c -- ma collector to emitter saturation voltage, v ce (sat) -- v
2sa608n/2sc536n no.6324-4/6 a s o 1000 100 7 5 3 2 7 5 3 2 10 7 5 3 2 1.0 10 100 25 37 25 37 57 it00511 i cp =400ma i c =150ma 100ms dc operation 10ms 500 0 400 600 300 200 100 20 060 40 80 100 140 120 160 p c -- ta it00510 2sa608n / 2sc536n for pnp, minus sign is omitted. 2sa608n / 2sc536n collector to emitter voltage, v ce -- v collector current, i c -- ma ambient temperature, ta -- c collector dissipation, p c -- mw
2sa608n/2sc536n no.6324-5/6 outline drawing 2sa608nf-npa-at, 2sa608ng-npa-at, 2sc536nf-npa-at, 2SC536NG-NPA-AT mass (g) unit 0.19 * for reference mm
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